STP80N70F6 mosfet equivalent, n-channel power mosfet.
Order code STP80N70F6
VDSS max.
68 V
RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W
(VGS= 10 V)
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of .
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
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