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STP80N70F6
N-channel 68 V, 0.0063 Ω typ., 96 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 package
Datasheet − production data
Features
Order code STP80N70F6
VDSS max.
68 V
RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W
(VGS= 10 V)
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge
TAB
3 2 1
TO-220
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Figure 1. Internal schematic diagram
$ 4!"
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3
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Table 1.
STP80N70F6 Datasheet
