Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A
* N-channel enhancement mode
* 100% avalanched rated
* Low gate charge
* Very low on-res.

Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device ha.

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. 3 2 1 TO-220 Figur.

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