STP77N6F6 mosfet equivalent, n-channel power mosfet.
Order code VDS
RDS(on) max
ID PTOT
STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS(on)
* H.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of.
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TAB
3 2 1
TO-220
Figure 1. Internal sch.
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