TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP65N045M9 650 V 45 mΩ 54A
* Worldwide best FOM RDS(on)*Qg among silicon-based devices
* .

G(1)
* High efficiency switching applications Description S(3) AM01475v1_noZen This N-channel Power MOSFET is .

S(3) AM01475v1_noZen This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a mul.

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STP60L60

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STP60L60F

STP60N043DM9

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