STP65N150M9 Datasheet, STMicroelectronics

Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A
* Worldwide best FOM RDS(on)*Qg among silicon-based devices
* Higher VDSS rating
* Highe.

* High efficiency switching applications Description S(3) AM01476v1_tab This N-channel Power MOSFET is based on th.

S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-dr.