Datasheet4U Logo Datasheet4U.com

STP65N150M9 - N-CHANNEL Power MOSFET

Description

AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.

Features

  • Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A.
  • Worldwide best FOM RDS(on).
  • Qg among silicon-based devices.
  • Higher VDSS rating.
  • Higher dv/dt capability.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Zener-protected G(1).

📥 Download Datasheet

📁 Similar Datasheet

  • STP65NF06 - N-Channel MOSFET (INCHANGE)
  • STP6506 - MOSFET (Stanson Technology)
  • STP652F - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop)
  • STP656F - N-Channel Enhancement Mode Field Effect Transistor (SamHop)
  • STP601 - P-Channel Enhancement Mode MOSFET (Stanson Technology)
  • STP601D - P-Channel Enhancement Mode MOSFET (Stanson Technology)
  • STP605D - P-Channel Enhancement Mode MOSFET (STANSON)
  • STP607 - P-Channel Enhancement Mode MOSFET (STANSON)
  • STP607D - MOSFET (Stanson Technology)
  • STP60L60 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STP65N150M9 Datasheet N-channel 650 V, 128 mΩ typ., 20 A MDmesh M9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) Features Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A • Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance • Easy to drive • 100% avalanche tested • Zener-protected G(1) Applications • High efficiency switching applications Description S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
Published: |