STP65N150M9 - N-CHANNEL Power MOSFET

STMicroelectronics

STP65N150M9 Datasheet Preview — Preview of STP65N150M9 PDF

Datasheet Details

Part number	STP65N150M9
Manufacturer	STMicroelectronics ↗
File Size	228.51 KB
Description	N-CHANNEL Power MOSFET
Datasheet	STP65N150M9-STMicroelectronics.pdf

STP65N150M9 Product details

Description

S(3) AM01476v1_tab This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly

Features

Order code VDS RDS(on) max. ID STP65N150M9 650 V 150 mΩ 20 A.
Worldwide best FOM RDS(on).
Qg among silicon-based devices.
Higher VDSS rating.
Higher dv/dt capability.
Excellent switching performance.
Easy to drive.
100% avalanche tested.
Zener-protected G(1).

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Published: Mar 1, 2023 |