STP260N6F6 mosfet equivalent, n-channel power mosfet.
Order codes
STI260N6F6 STP260N6F6
VDSS 60 V
RDS(on) max
ID
< 0.003 Ω 120 A
* Low gate charge
* Very low on-resistance
* High avalanche ruggedness
Appli.
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technol.
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3 2 1
TO-220
Fi.
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