Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1) Features
* Among the lowest RDS(on) on .

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) .

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