STP170N8F7 mosfet equivalent, n-channel power mosfet.
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TO-220
Figure 1. Internal schematic diagram
' 7$%
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Order code VDS RDS(on) max. ID PTOT STP170N8F7 80 V 0.0039 Ω 120 A 250 W
* Among the lowest RDS.
* Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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