STP15810 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% Order code STP15810 VDS RDS(on)max ID PTOT 100 V 0.0042 Ω 110 A 250 W
* 100% avalanche tested
.

Application

* Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced.

Description

This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * .

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