STP150N3LLH6 mosfet equivalent, n-channel mosfet.
Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
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VDSS 30 V 30 V 30 V
RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω
ID 80 A 80 A 80 A
3 1
3 2 1
DPAK
IPAK.
Figure 1.
Internal schematic diagram
$ 4!" OR
Description
This product utilizes the 6th generation of design rule.
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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3
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Table 1.
Device summary
Mark.
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