STP13NM60N Datasheet, ST Microelectronics

3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N
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* Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed usin.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and g.

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