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STP13N60M2
Datasheet
N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STP13N60M2
600 V
380 mΩ
11 A
• Extremely low gate charge
•
Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology. Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.