STP12N50M2 mosfet equivalent, n-channel power mosfet.
Order code STP12N50M2
VDS 500 V
RDS(on) max ID 0.38 Ω 10 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resi.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using a new generation of M.
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest.
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