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STP12NM50FP - N-Channel MOSFET

Features

  • Drain-source on-resistance: RDS(on) ≤ 0.35Ω@10V.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP12NM50FP ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.35Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 48 PD Total Dissipation @TC=25℃ 35 Tj Max.
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