STLD200N4F6AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STLD200N4F6AG VDS 40 V RDS(on) max. 1.5 mΩ ID 120 A
* Designed for automotive applications
* Very low on-resistance
* Very low gate charge
.

Application

* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss .

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STLD200N4F6AG Marking 200 Table 1: .

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