STLD110N10F7 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. STLD110N10F7 100 V 6 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio fo.

Application

* Switching applications G(4) S(1, 2, 3) AM15540v4 Description This N-channel Power MOSFET utilizes STripFET™ F7 .

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Produ.

Image gallery