STL8P4LLF6 mosfet equivalent, p-channel power mosfet.
Order code
VDS RDS(on) max. ID
PTOT
STL8P4LLF6 40 V 0.0205 Ω 8 A 2.9 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* .
* Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 techno.
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
For the P-channel Power MOSFET, current polarity of voltages .
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