1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL80N75F6 VDS 75 V RDS(on) max 5.5 mΩ
* Low gate charge

* Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation .

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 .

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