STL8DN6LF6AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6)
* AEC-Q101 qualified
* Very low on-resis.

Application

* Switching applications Description S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using th.

Description

S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL8DN6LF6AG.

Image gallery