1 2 3 Order code VDS RDS(on) max. ID 1 2 3 6 5 4 PowerFLAT 2x2 STL4P3LLH6 30 V 56 mΩ 4A
* Very low on-resistance
* Very low gate charge
* High .

* Switching applications D S 6(D) 5(D) 4(S) Bottom view Description This device is a P-channel Power MOSFET deve.

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11269v1 Product status link STL4P3LLH6 Product summary Ord.

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