Order code VDS STL42P4LLF6 40 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max..

* Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFE.

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL42P4LLF6 Product summary Order code .

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