STL4N10F7 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS STL4N10F7 100 V
* Excellent FoM (figure of merit)
* Low Crss/Ciss ration for EMI immunity
* High avalanche ruggedness RDS(on) max. 70 mΩ .

Application

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced .

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Matur.

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