Order code STL4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 2A
* Industry’s lowest RDS(on) * area
* Industry’s best FoM (figure of merit)
* Ultra low-gate charg.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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