Order code VDS RDS(on ) max. STL3NM60N 600 V 1.8 Ω
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance ID 2.2 .

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generation.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and ga.

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