Order code VDS RDS(on ) max. STL3N65M2 650 V 1.8 Ω
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 100% avalanche tested

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the.

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