STL34NF06 Datasheet | STMicroelectronics

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STrip FET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new Power FLAT™ package allow a significant reduction in board space without pramising performance. Power FLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (- ) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 34 20 136 70 0.56 250 - 55 to 150 (1) Starting Tj = 25°C, ID = 17A, VDD = 42V Unit V V V A A A W W/°C m J °C (- )Pulse width limited by safe operating area (- ) Current Limited by Wire Bonding is 20A November 2002 1/6 .. THERMAL DATA Rthj-case Rthj-pcb (#) Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.8 31.2 °C/W °C/W (- ) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 sec. ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 60 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 17A Min. 2 0.024 0.028 Typ. Max. Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions...