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STL34NF06 Datasheet

N-CHANNEL MOSFET

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STL34NF06
N-CHANNEL 60V - 0.024- 34A PowerFLAT™
LOW GATE CHARGE STripFET™II MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STL34NF06
60 V < 0.02834 A
TYPICAL RDS(on) = 0.024
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
PowerFLAT™(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C (*)
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
November 2002
Value
60
60
± 20
34
20
136
70
0.56
250
–55 to 150
(1) Starting Tj = 25°C, ID = 17A, VDD = 42V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/6


STMicroelectronics Electronic Components Datasheet

STL34NF06 Datasheet

N-CHANNEL MOSFET

No Preview Available !

STL34NF06
www.DataSheet4U.com
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-pcb (#) Thermal Resistance Junction-ambient Max
(*) When mounted on 1inch² FR4 Board, 2oz of Cu, t 10 sec.
1.8
31.2
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
°C/W
°C/W
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 17A
Min.
2
Typ. Max.
0.024 0.028
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1) Forward Transconductance VDS = 30 V , ID = 17 A
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss Reverse Transfer
Capacitance
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
TBD
920
225
80
Max.
Unit
S
pF
pF
pF
2/6


Part Number STL34NF06
Description N-CHANNEL MOSFET
Maker STMicroelectronics
Total Page 6 Pages
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