STL23NM50N datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type STL23NM50N VDSS @ TJmax 550 V RDS(on) max < 0.210 Ω ID 14 A (1) 1. The value is rated according to Rthj-case
* 100% avalanche tested
* Low input capacit.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generation.

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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