Order code STL140N4F7AG VDS 40 V RDS(on) max 2.5 mΩ ID 120 A
* AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of meri.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order.

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