STL12P6F6 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STL12P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V ID 3A 1 2 3 4
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanc.

Application

* Switching applications Figure 1. Internal schematic diagram 'ĆĆĆ Description This device is a P-channe.

Description

This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. * 6ĆĆ $09 Table 1. Dev.

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