Order code STL120N4F6AG VDS 40 V RDS(on) max. 3.6 mΩ ID 55 A
* AEC-Q101 qualified
* Very low on-resistance
* Very low gate charge
* High avalanche rug.

* Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 techn.

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL120N4F6AG Table 1: Device summary Marking P.

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