STI300N4F6 mosfet equivalent, n-channel power mosfet.
Order code STI300N4F6
VDS 40 V
RDS(on) max
ID
2.2 mΩ
160 A(1)
1. Limited by wire bonding
* Standard level VGS(th)
* 100% avalanche rated
Applications
* Automotive switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th ge.
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
123
I²PAK
Figure 1. Internal schematic .
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