STI30NM60ND Datasheet | STMicroelectronics

STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type .. VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 1 2 STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND 3 1 2 TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed - - - - - The world’s best RDS(on)- in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. 3 12 2 1 I2PAK TO-247 Internal schematic diagram Application - Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly remended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device...