STI18NM60N mosfet equivalent, n-channel power mosfet.
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID
PW
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
* 100% avalanche te.
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET a.
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref.
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