STH360N4F6-2 mosfet equivalent, n-channel power mosfet.
N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
Datasheet − preliminary data
Order code STH360N4F6-2
VDSS 40 V
RDS(on) max
ID
< 1.25 mΩ.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of.
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TAB 2 3 1
H2PAK-2
Figure 1. Internal sc.
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