STH2N120K5-2AG Datasheet, STMicroelectronics

Order code STH2N120K5-2AG VDS 1200 V RDS(on) max. 10 Ω
* AEC-Q101 qualified
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
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* Switching applications DTG1S23NZ Description This very high voltage N-channel Power MOSFET is designed using MDm.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.