STH2N120K5-2AG mosfet equivalent, automotive-grade n-channel power mosfet.
Order code STH2N120K5-2AG
VDS 1200 V
RDS(on) max. 10 Ω
* AEC-Q101 qualified
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
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* Switching applications
DTG1S23NZ
Description
This very high voltage N-channel Power MOSFET is designed using MDm.
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.
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