STH240N10F7-6 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. STH240N10F7-2 STH240N10F7-6 100 V 2.5 mΩ
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low C.

Description

G(1) G(1) These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient swi.

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