STH180N10F3-2 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS STH180N10F3-2 100 V
* Ultra low on-resistence
* 100% avalanche tested RDS(on) max. 4.5 mΩ ID 180 A Applications
* Switching application.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technolog.

Description

This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2,3) NCHG1DTABS23 Product status link STH180N10F3-2 Product sum.

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