STH15810-2 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS STH15810-2 100 V RDS(on)max 0.0039 Ω ID 110 A PTOT 250 W
* 100% avalanche tested
* Ultra low on-resistance Applications
* Switching applica.

Application

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .

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