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STH15NA50 - N-CHANNEL Power MOS MOSFET

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Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number STH15NA50
Manufacturer STMicroelectronics
File Size 243.26 KB
Description N-CHANNEL Power MOS MOSFET
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STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH15NA50 STH15NA50FI STW15NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω ID 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218 1 3 2 1 3 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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