Datasheet4U Logo Datasheet4U.com

STGW30NC120HD - N-CHANNEL IGBT

General Description

Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances.

Key Features

  • Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A.
  • Low on-losses.
  • Low on-voltage drop (Vcesat).
  • High current capability.
  • High input impedance (voltage driven).
  • Low gate charge.
  • Ideal for soft switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGW30NC60W ultra fast IGBT STMicroelectronics
STGW30N120KD short circuit rugged IGBT STMicroelectronics
STGW30H60DF 30A high speed trench gate field-stop IGBT STMicroelectronics
STGW30H60DFB 30A high speed HB series IGBT STMicroelectronics
STGW30H65FB IGBT STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGW30NC60VD fast IGBT
STGW30NC60WD N-CHANNEL IGBT
STGW30N90D IGBT
STGW30NB60H N-CHANNEL IGBT
STGW30NB60HD N-CHANNEL IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH™ IGBT Features Type VCES STGW30NC120HD 1200V VCE(sat) @25°C < 2.75V IC @100°C 30A ■ Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application Application ■ Induction heating Description Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1.