STGW30H65FB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ.) at IC = 30 A
* Tight par.
* Photovoltaic inverters
* Power factor correction
* Welding
* High-frequency converters
Description
The.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the effici.
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