* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.8 V (typ.) @ IC = 20 A
* Tight parameter distribution
* Safe para.

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very.

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