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STGW20H65FB Datasheet, STMicroelectronics

STGW20H65FB igbt equivalent, igbt.

STGW20H65FB Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 451.82KB)

STGW20H65FB Datasheet

Features and benefits


* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ.) @ IC = 20 A
* Tight para.

Application


* Photovoltaic inverters
* Power factor correction
* Welding
* High-frequency converters Description Thi.

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .

Image gallery

STGW20H65FB Page 1 STGW20H65FB Page 2 STGW20H65FB Page 3

TAGS

STGW20H65FB
IGBT
STMicroelectronics

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