STGW20H65FB igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ.) @ IC = 20 A
* Tight para.
* Photovoltaic inverters
* Power factor correction
* Welding
* High-frequency converters
Description
Thi.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency .
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