STGW20H65FB Datasheet | STMicroelectronics

Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - VCE(sat) = 1.55 V (typ.) @ IC = 20 A - Tight parameters distribution - Safe paralleling - Low thermal resistance Applications - Photovoltaic inverters - Power factor correction - Welding - High-frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGFW20H65FB STGW20H65FB STGWT20H65FB DS10546 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. .st. STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulsed collector current Gate-emitter voltage VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) PTOT Total power dissipation at TC = 25...