STGP20M65DF2 Datasheet, STMicroelectronics

* High short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 20 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistanc.

* Motor control
* UPS
* PFC
* General-purpose inverters Description E(3) NG1E3C2T This device is an IGB.

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lo.