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STGP20V60DF - 600V 20A very high speed trench gate field-stop IGBT

Download the STGP20V60DF datasheet PDF. This datasheet also covers the STGB20V60DF variant, as both devices belong to the same 600v 20a very high speed trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series 3 2 1 1 3.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2.
  • Very fast soft recovery antiparallel diode.
  • Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB20V60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STGP20H60DF 600V 20A high speed trench gate field-stop IGBT
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Full PDF Text Transcription

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 2 1 1 3 • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A • Tight parameters distribution • Safe paralleling • Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2 • Very fast soft recovery antiparallel diode • Lead free package TO-247 TO-3P Figure 1.
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