STGD6M65DF2 igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* 6 μs of minimum short-circuit withstand time
*
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
* Tight parameter di.
* Industrial motor control
* PFC converters, single phase input
* Uninterruptable power supplies (UPS)
Des.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and th.
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