STGD10NC60H datasheet, igbt equivalent, STMicroelectronics

Features and benefits

Type STGD10NC60H
*
* VCES 600V IC VCE(sat) (Max)@ 25°C @100°C < 2.5V 10A 3 1 Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibi.

Application

in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Internal schemati.

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequen.

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