STGD4H60DF igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
* Tight parameter distribution
* Low thermal resistance
* Short-c.
* Industrial motor control
* Dishwashers
* Refrigerators and freezers
* Fans
Description
This device is .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of.
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