* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
* Tight parameter distribution
* Low thermal resistance
* Short-c.

* Industrial motor control
* Dishwashers
* Refrigerators and freezers
* Fans Description This device is .

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts