| Description | This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Order codes STGB20N40LZ STGD20N40LZ Table 1. Device summary Marking Packag... |
| Features |
• Designed for automotive applications and AEC-Q101 qualified • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) G (1) RG RGE Applications • Pencil coil electroni... |
| Datasheet |
 STGD20N40LZ Datasheet - 1.11MB |
