STGB30H65DFB2 igbt equivalent, high-speed hb2 series igbt.
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail c.
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NG1E3C2T
Welding Power factor correction UPS Solar inverters Chargers
Description
The n.
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, .
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